MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
نویسندگان
چکیده
Abstract Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed context of ATLAS ITk upgrade Phase-II at HL-LHC and for future collider experiments. The “MALTA-Czochralski (MALTA-Cz)” full size DMAPS sensor has with goal to demonstrate a radiation hard, thin high granularity, hit-rate capability, fast response time superior tolerance. design targets hardness > 10 15 (1 MeV) n eq /cm 2 100 Mrad TID. shall operate as tracking spatial resolution ≈ μm be able cope hit rates excess MHz/cm LHC bunch crossing frequency 40 MHz. 512 × pixel uses small collection electrodes (3.5 μm) minimize capacitance. (36.4 36.4 ) provides resolution. Its asynchronous readout architecture is hit-rates triggered trigger-less detector applications. stream all data multi-channel output which allows an off-sensor trigger formation use hit-time information event tagging. manufacturing optimised through adaptation special implant designs allow electrode on thick high-resistivity p-type Czochralski substrate. processing ensures excellent charge particle detection efficiency even after level radiation. Furthermore substrate improves sensor's This paper presents summary optimisation choices TCAD simulation model signal response. Beam laboratory test results unirradiated irradiated shown dose 1 MeV . measured σ = ns.
منابع مشابه
CMOS sensors with high resistivity epitaxial layer
A. Besson∗a, M. Wintera, J. Baudota, G. Bertolonea, N. Chon-Sena, G. Clausa, C. Colledania, Y. Degerlib, A. Dorokhova, G .Dozièrea, W. Dulinskia, M. Gelina, A. Geromitsosa, M. Goffea, A. Himmia, C. Hu-Guoa, K. Jaaskelainena, F. Morela, H. Phama, C. Santosa, S. Senyukova, M. Spechta, M. Szelezniaka, I. Valina, G. Voutsinasa. a IPHC/IN2P3/CNRS Université de Strasbourg Strasbourg, France b IRFU/SE...
متن کاملMonolithic integration of a plasmonic sensor with CMOS technology
Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. D...
متن کاملParticle detectors made of high-resistivity Czochralski silicon
We have processed pin-diodes and strip detectors on nand p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900O cm and 1.9 kO cm for nand p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit ...
متن کاملA direct-detection X-ray CMOS image sensor with 500 μm thick high resistivity silicon
This paper reports recent results of a direct-detection X-ray CMOS image sensor for X-ray Free-Electron Laser (XFEL) experiments. The sensor incorporates the in-pixel dual gain circuitry by using Fully Depleted-Silicon-On-Insulator (FD-SOI) CMOS transistors located on top of the buried oxide (BOX) layer. Beneath of the BOX layer, high resistivity handle wafer made from floating zone method was ...
متن کاملA Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and lo...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Instrumentation
سال: 2023
ISSN: ['1748-0221']
DOI: https://doi.org/10.1088/1748-0221/18/09/p09018